Sylvania: Vintage Transistors / Diodes Collection

This site contains my collection of vintage transistors and diodes, most of them included with their original package or sleeves. The devices are produced in the late fifties and early sixties except the MOSFET's from Sony they where made in 1975. Enjoy the collectables and click on the picture links for more details. Suggestions regarding these transistors are welcome. I'm always looking for new semiconductor items to complete my collection, so if you would like to sell or exchange something, please contact me, jan@transparentsound.com.


Evolution of the Crystal Rectifiers:
Manufacturer : Sylvania Electric, Western Electric, Sylvania etc.
Year : Between 1942 and1950
Package, Case style : Carton box, PIN etc.
Spec's : Thanks to Simon Hemour from the US for his historic information. See book: The Bell System Technical Journal, Vol. XXVI October, 1947 No. 4, The Radar Receiver, By L. W. MORRISON, JR , Nice article about harvesting microwaves energy, see website: http://ieeexplore.ieee.org/stamp/stamp.jsp?reload=true&arnumber=6922611
Photo's : Picture1, Picture2, Picture3, Picture4, (see website: http://www3.alcatel-lucent.com/bstj/)

GT-442 Type : GT-422, PNP Germanium Point Contact Transistor (New) (Thanks to Rick Hirsh from the US for his grateful historic information)

Manufacturer : Sylvania
Year : 1952 till 1953
Package, Case style : Carton box, Bakelite half round 12mm can
Spec's : Vcbo=-?V, Hfe=?, Ic=-?mA, P=?mW (Who can help me with the technical data?) the Sylvania GT-372 was only an "experimental" model that was developed in 1949, which was Sylvania's first germanium point-contact transistor that was made. But, it never went into actual production, like the GT-442 germanium point-contact did, when it's prototype was first developed in 1952, and then went into actual production in 1953. The GT-442, was Sylvania's 2nd germanium point-contact transistor developed and is quite "unique" in its design, being completely different from the GT-372. The GT-442 had a much better design, where it was like a tiny "miniaturized" vacuum tube that could be plugged into a socket, instead of being soldered into a circuit.
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5

1N21 Type : 1N21, Diode

Manufacturer : Sylvania Electric
Year : ?
Package, Case style : Carton box, PIN
Spec's : Pin (W) (Test Condition) = ?m, R(L)(Ohms) (Test Condition) = ?, z(if) Min. (Ohms) IF Impedance = ?, z(if) Max. (Ohms) IF Impedance = ?, f(test) (Hz) Test Frequency = ?
Photo's : Picture1, Picture2, Picture3, Picture4, (Donated by Ronald Werner from Norway)

1N23A Type : 1N23A, General Purpose UHF-MW Silicon Mixer Diode

Manufacturer : Sylvania Electric
Year : ?
Package, Case style : Carton box, PIN
Spec's : Pin (W) (Test Condition) = 1.0m, R(L)(Ohms) (Test Condition) = 100, z(if) Min. (Ohms) IF Impedance = 300, z(if) Max. (Ohms) IF Impedance = 600, f(test) (Hz) Test Frequency = 10G
Photo's : Picture1, Picture2, Picture3, Picture4

1N23B Type : 1N23B, General Purpose UHF-MW Silicon Mixer Diode

Manufacturer : Sylvania Electric
Year : ?
Package, Case style : Carton box, PIN
Spec's : Pin (W) (Test Condition) = 1.0m, R(L)(Ohms) (Test Condition) = 100, z(if) Min. (Ohms) IF Impedance = 250, z(if) Max. (Ohms) IF Impedance = 550, f(test) (Hz) Test Frequency = 9.4G
Photo's : Picture1, Picture2, Picture3, Picture4

1N34 Type : 1N34, Germanium Diode

Manufacturer : Sylvania Electric
Year : ?
Package, Case style : Carton box, ?
Spec's : Forward Current(Vf=1V)= 5mA, Reverse Voltage=75V(max), Ir(Vrm=10V)=30uA, Ir(Vrm=50V)=500uA
Photo's : Picture1, Picture2

1N34 Type : 1N34, Crystal Diode

Manufacturer : Sylvania Electric
Year : ?
Package, Case style : Carton sleeve, ?
Spec's : Forward Current (Vf=1V)= 5mA, Reverse Voltage=75V(max), Ir(Vrm=10V)=30uA, Ir(Vrm=50V)=500uA
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5

1N34A Type : 1N34A, Germanium Diode

Manufacturer : Sylvania
Year : Fifties
Package, Case style : Carton sleeve, ?
Spec's : Forward Current (Vf=1V)= 5mA, Reverse Voltage=75V(max), Ir(Vrm=10V)=30uA, Ir(Vrm=50V)=500uA
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5, Picture6

1N82 Type : 1N82, Germanium Diode

Manufacturer : Sylvania
Year : Fifties
Package, Case style : None, Glass bulb
Spec's : Forward Current (Vf=1V)= ?mA, Reverse Voltage=?V(max), Ir(Vrm=10V)=?uA, Ir(Vrm=50V)=?uA
Photo's : Picture1, Picture2, Picture3

2N34 Type : 2N34, PNP Germanium Transistor

Manufacturer : Sylvania, (Picture 8 is Sylvania + HP transistor)
Year : 1953
Package, Case style : Carton sleeve, TO-22var
Spec's : Vcbo=-25V, Hfe=40, Ic=-8mA, P=50mW
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5, Picture6, Picture7, Picture8

2N68 Type : 2N68, PNP Alloy Junction Germanium Power Transistor

Manufacturer : Sylvania
Year : Mid fifties
Package, Case style : Carton box, TO-8 with heatsink
Spec's : Vcbo=-25V,Vebo=-?V, Hfe=40, Ic=-1.5A, Icbo=5mA, P=2W, ft=400kHz, NPN complementary device is the 2N95.
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5, Picture6, Picture7

2N95 Type : 2N95, NPN Alloy Junction Germanium Power Transistor

Manufacturer : Sylvania
Year : Mid fifties
Package, Case style : Carton box, TO-8 with heatsink
Spec's : Vcbo=25V,Vebo=-?V, Hfe=?, Ic=1.5A, Icbo=?mA, P=2.5W, ft=?kHz, PNP complementary device is the 2N68.
Photo's : Picture1, Picture2, Picture3

2N101 Type : 2N101, PNP Germanium Power Transistor

Manufacturer : Sylvania
Year : 1957, week 52 (752)
Package, Case style : Carton box, TO-8, The 2N101 is supplied without a finned heatsink like the 2N68. The GT551 is a pre-production version of the Sylvania 2N68 and 2N95 commercial transistors.
Spec's : Vcbo=-25V,Vebo=-?V, Hfe=?, Ic=-1.5A, P=1W, NPN complementary device is the 2N102.
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5, Picture6, Picture7, Picture8

2N102 Type : 2N102, NPN Germanium Power Transistor

Manufacturer : Sylvania
Year : Mid fifties "104" Maybe week-4 1961, same production code style as Raytheon?
Package, Case style : Carton box, TO-8, The 2N102 is supplied without a finned heatsink like the 2N95
Spec's : Vceo=25V, Vcbo=?V, Hfe=?, Ic=1.5A, P=1W, PNP complementary device is the 2N101.
Photo's : Picture1, Picture2, Picture3, Picture4

2N143 Type : 2N143/13, PNP Germanium Power Transistor

Manufacturer : Sylvania
Year : Mid fifties "104" Maybe week-4 1961, same production code style as Raytheon?
Package, Case style : Carton box,  with sleeve, TO-8, The 2N143 is supplied without a finned heatsink like the 2N68.
Spec's : Vcbo=-60V,Vceo=-30V, Hfe=40, Ic=-800mA, Icbo=100uA, P=1W, ft=400kHz, NPN complementary device is the 2N102.
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5

2N144 Type : 2N144, NPN Germanium Power Transistor

Manufacturer : Sylvania
Year : Mid fifties "104" Maybe week-4 1961, same production code style as Raytheon?
Package, Case style : Carton box, with sleeve, TO-8, The 2N101 is supplied without a finned heatsink like the 2N95.
Spec's : Vcbo=60V,Vebo=30V, Hfe=40, Ic=800mA, Icbo=100uA, P=1W, ft=400kHz, PNP complementary device is the 2N143.
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5

2N229 Type : 2N101, NPN Germanium Alloy Junction Transistor

Manufacturer : Sylvania
Year : 1950s-1960s
Package, Case style : ?, TO-22
Spec's : Vceo=12V, Vcbo=10V, Hfe=75, Ic=40mA, Icbo=200uA, P=50mW, ft=550kHz
Photo's : Picture1, Picture2

2N247 Type : 2N247, PNP Germanium PNP Alloy Junction Drift Transistor

Manufacturer : Sylvania
Year : 852, week-62 1958
Package, Case style : Carton box, TO-22
Spec's : Vceo=-?V, Vcbo=-40V, Hfe=75, Ic=-10mA, Icbo=16uA, P=80mW
Photo's : Picture1, Picture2, Picture3, (see also RCA 2N247)

2N255 Type : 2N255, PNP Germanium Power Transistor

Manufacturer : Sylvania
Year : Mid fifties
Package, Case style : Carton box, TO-3
Spec's : Vceo=12V, Vcbo=-15V, Hfe=75, Ic=-3A, P=1.5W, ft=200kHz
Photo's : Picture1, Picture2, Picture3, Picture4

2N306 Type : 2N306, NPN Germanium Low Power Transistor

Manufacturer : Sylvania
Year : ?
Package, Case style : ?, TO-22
Spec's : Vceo=15V, Vcbo=20V, Hfe=25, Ic=2mA, P=50mW, ft=600kHz
Photo's : Picture1, Picture2, Picture3

2N711 Type : 2N711, PNP Germanium Low Power Transistor

Manufacturer : Sylvania
Year : Mid fifties
Package, Case style : Carton box, TO-18
Spec's : Vceo=-12V, Vcbo=-12V, Hfe=20-250, Ic=-100mA, Icbo=3uA, P=150mW, ft=1MHz, Cobo=7.5pF
Photo's : Picture1, Picture2

2N1294 Type : 2N1294, NPN Germanium Power Transistor

Manufacturer : Sylvania
Year : ?
Package, Case style : Carton box, TO-3
Spec's : Vceo=45V, Vcbo=80V, Hfe=>30, Ic=3A, Icbo=300uA, P=25W
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5, Picture6, Picture7

Sylvania's BIG-9 Type : 101, 102, 103, 104, NPN Germanium Power Transistors, 105, 106, 107, 108, 109 PNP Germanium Power Transistors

Manufacturer : Sylvania
Year : ?
Package, Case style : Carton box, TO-22 for all models
Spec's : Unknown
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5

Sylvania Transistor Kit Type : Transisytor kit, originally included with 2pcs 2N35, 1pcs. 1N34A and one "28 uses for Junction Transistors" booklet.

Manufacturer : Sylvania
Year : Mid fifties
Package, Case style : Two tone Yellow Carton box.
Spec's : Unknown. Kit is incomplete. I'm missing one transistor 2N35 and one diode 1N34A. The box is very detailed with extra technical information regarding 2N68, 2N94, 2N95, 2N101 and 2N102. More information regarding the "28 uses for Junction Transistors" see Book/Datasheet info.
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5

 

These are the early Power Transistors of Sylvania and fully described on the website of Jack Ward www.semiconductormuseum.com. The transistors where developed for audio applications in the mid 50s and produced in several styles. Like the 2N101 on the left, this is the  model with thick leads but there are other devices with thin leads. The PNP models are the 2N68 (with heatsink 2Watt), 2N101 and 2N143 both (naked 1Watt) and for the NPN models the 2N95 (withheat sink 2Watt), 2N102 and 2N144 both (without heatsink 1Watt). The Sylvania series as described is in my opinion unique, because Sylvania designed these devices with similar characteristics so they could be used in output stages of audio amplifiers.


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